Ultrafast all-optical modulation on a silicon chip

被引：112
作者：
Preble, SR [1 ]
Xu, QF [1 ]
Schmidt, BS [1 ]
Lipson, M [1 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
OPTICS LETTERS | 2005年 / 30卷 / 21期
关键词：
D O I：
10.1364/OL.30.002891
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip. (c) 2005 Optical Society of America.
引用
收藏
页码：2891 / 2893
页数：3
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