Influence of physical and chemical surface treatment on the photoluminescence of porous silicon

被引：2
作者：
Maronchuk, IE [1 ]
Naidenkov, MN [1 ]
Naidenkova, MV [1 ]
Sarikov, AV [1 ]
Voloshina, TL [1 ]
机构：
[1] Kherson State Tech Univ, UA-325008 Kherson, Ukraine
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 01期
关键词：
Silicon; Chloride; Surface Treatment; Chemical Surface; Porous Silicon;
D O I：
10.1134/1.1259266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that surface treatment of porous silicon in inorganic acids and solutions of metal chlorides leads to an increase in the intensity of photoluminescence of this material. In the case of chlorides, a short-wavelength shift of the photoluminescence maximum is also observed. The effect of a brief high-temperature anneal in vacuum on the photoluminescence of porous silicon is investigated. Such treatment is observed to cause partial degradation. (C) 1999 American Institute of Physics. [S1063-7842(99)02501-5].
引用
收藏
页码：122 / 123
页数：2
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