Influence of physical and chemical surface treatment on the photoluminescence of porous silicon

被引：2
作者：
Maronchuk, IE [1 ]
Naidenkov, MN [1 ]
Naidenkova, MV [1 ]
Sarikov, AV [1 ]
Voloshina, TL [1 ]
机构：
[1] Kherson State Tech Univ, UA-325008 Kherson, Ukraine
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 01期
关键词：
Silicon; Chloride; Surface Treatment; Chemical Surface; Porous Silicon;
D O I：
10.1134/1.1259266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that surface treatment of porous silicon in inorganic acids and solutions of metal chlorides leads to an increase in the intensity of photoluminescence of this material. In the case of chlorides, a short-wavelength shift of the photoluminescence maximum is also observed. The effect of a brief high-temperature anneal in vacuum on the photoluminescence of porous silicon is investigated. Such treatment is observed to cause partial degradation. (C) 1999 American Institute of Physics. [S1063-7842(99)02501-5].
引用
收藏
页码：122 / 123
页数：2
相关论文
共 50 条
  • [1] Influence of physical and chemical surface treatment on the photoluminescence of porous silicon
    I. E. Maronchuk
    M. N. Naidenkov
    M. V. Naidenkova
    A. V. Sarikov
    T. L. Voloshina
    Technical Physics, 1999, 44 : 122 - 123
  • [2] The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon
    Li Jingjian
    Diao Peng
    Cai Shengmin
    Hou Yongtian
    Wang Xin
    Zhang Shulin
    ACTA PHYSICO-CHIMICA SINICA, 1994, 10 (08) : 737 - 740
  • [3] Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon
    E. A. Shelonin
    M. V. Naidenkova
    A. M. Khort
    A. G. Yakovenko
    A. A. Gvelesiani
    I. E. Maronchuk
    Semiconductors, 1998, 32 : 443 - 445
  • [4] Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon
    Shelonin, EA
    Naidenkova, MV
    Khort, AM
    Yakovenko, AG
    Gvelesiani, AA
    Maronchuk, IE
    SEMICONDUCTORS, 1998, 32 (04) : 443 - 445
  • [5] Influence of Acetone Vapor on the Photoluminescence Behavior of Porous Silicon
    A. M. Orlov
    A. A. Skvortsov
    A. V. Sindyaev
    Inorganic Materials, 2001, 37 : 429 - 435
  • [6] Influence of acetone vapor on the photoluminescence behavior of porous silicon
    Orlov, AM
    Skvortsov, AA
    Sindyaev, AV
    INORGANIC MATERIALS, 2001, 37 (05) : 429 - 435
  • [7] Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon
    Zhao, Yue
    Li, Dongsheng
    Xing, Shuoxiang
    Sang, Wenbin
    Yang, Deren
    Jiang, Minhua
    JOURNAL OF LUMINESCENCE, 2008, 128 (03) : 317 - 320
  • [8] SURFACE STATES AND PHOTOLUMINESCENCE FROM POROUS SILICON
    Islam, Md. Nazrul
    Kumar, Satyendra
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 910 - 913
  • [9] PHOTOLUMINESCENCE AND SURFACE MORPHOLOGY OF NANOSTRUCTURED POROUS SILICON
    Dubey, R. S.
    Gautam, D. K.
    CHALCOGENIDE LETTERS, 2009, 6 (10): : 523 - 528
  • [10] Influence of LiBr on photoluminescence properties of porous silicon
    Dimassi, W.
    Haddadi, I.
    Bousbih, R.
    Slama, S.
    Kanzari, M. Ali
    Bouaicha, M.
    Ezzaouia, H.
    JOURNAL OF LUMINESCENCE, 2011, 131 (05) : 829 - 833
12345