ITO film prepared by ion beam sputtering and its application in high-temperature thermocouple

被引：29
|
作者：
Zhang, Yao [1 ]
Cheng, Ping [1 ]
Yu, Kaiqing [1 ]
Zhao, Xiaolin [1 ]
Ding, Guifu [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai 200240, Peoples R China
来源：
VACUUM | 2017年 / 146卷
关键词：
ITO film; Ion beam sputtering; Thin film thermocouple; INDIUM-TIN-OXIDE; ENGINE APPLICATIONS; THIN-FILMS;
D O I：
10.1016/j.vacuum.2017.08.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion beam sputtering deposition was firstly introduced to prepare indium tin oxide (ITO) film in this study. The microstructure of the ITO film was characterized by XRD, SEM and XPS. The Pt-ITO thin film thermocouple was fabricated on the alumina substrate using MEMS process for high temperature application. The thermoelectric output of the Pt-ITO thin film thermocouple was measured from room temperature to 1200 degrees C. The average seebeck coefficient was 65.39 mu V/degrees C. The thermoelectric output was very stable upon three heating and cooling cycles. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：31 / 34
页数：4
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