Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

被引：23

作者：

Megherbi, M. L. ^{[1
]}

Pezzimenti, F. ^{[2
]}

Dehimi, L. ^{[1
,3
]}

Rao, S. ^{[2
]}

Della Corte, F. G. ^{[2
]}

机构：

[1] Mohammed Kheider Univ, Lab Metall & Semiconducting Mat, Biskra 07000, Algeria

[2] DIIES Univ Mediterranea Reggio Calabria, I-89122 Reggio Di Calabria, Italy

[3] Elhadj Lakhdar Univ, Fac Sci, Batna 05000, Algeria

来源：

SOLID-STATE ELECTRONICS | 2015年 / 109卷

关键词：

p-i-n diode; Silicon carbide; Device simulation; Carrier lifetime; TEMPERATURE-COEFFICIENT; SIMULATION; 4H; 3C;

D O I：

10.1016/j.sse.2015.03.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 m Omega cm(2) becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：12 / 16

页数：5

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