Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

被引：6
作者：
Maye, C. [1 ]
Lepilliet, S. [1 ]
Okada, E. [1 ]
Margalef-Rovira, M. [1 ]
Alaji, I [1 ]
Gloria, D. [2 ]
Ducournau, G. [1 ]
Gaquiere, C. [1 ]
机构：
[1] Univ Lille, Univ Polytech Hauts de France, CNRS, Cent Lille,UMR 8520,IEMN Inst Elect Microdlectron, F-59000 Lille, France
[2] STMicrolelectronics, F-38926 Crolles, France
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2022年 / 70卷 / 01期
关键词：
Tuners; Impedance; Radio frequency; Power measurement; Frequency measurement; Power generation; Calibration; BiCMOS 55 nm technology; de-embedding; impedance tuner; load-pull (LP) measurement; millimeter-wave characterization; power calibration;
D O I：
10.1109/TMTT.2021.3111170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution proposed is the association of an external power system of source and detectors, with an integrated synthesizer of impedance. The proposed system requires several analysis steps in order to be validated. On the other hand, special care is dedicated to the calibration of the scalar measurement in the millimeter-wave frequency range. Then, due to the unknown phase at the input and output of the device under test (DUT), scalar measurement can lead to high inaccuracy. Hence, an adaptive calibration is proposed and applied to the measurement of a bipolar transistor at 185 GHz. We highlight the effect of the missing phase information on the accuracy of measurement. Results of the measurement are discussed.
引用
收藏
页码：444 / 452
页数：9
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