Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

被引：7

作者：

Mai, Lili ^{[1
]}

Xu, Fei ^{[1
]}

Jiang, Zuimin ^{[2
]}

Ma, Zhongquan ^{[1
]}

Wang, Xiao ^{[2
]}

Xu, Run ^{[3
]}

Fan, Yongliang ^{[2
]}

Lou, Haonan ^{[2
]}

Lu, Fang ^{[2
]}

Zheng, Lingling ^{[1
]}

机构：

[1] Shanghai Univ, Coll Sci, Dept Phys, SHU SolarE R&D Lab, Shanghai 200444, Peoples R China

[2] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

[3] Shanghai Univ, Sch Mat Sci & Engn, Dept Elect Informat Mat, Shanghai 200444, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 23期

基金：

中国国家自然科学基金;

关键词：

Rare earth doping; Silicon nanocrystals; Photoluminescence; Broadband sensitizer; Magnetron sputtering; ENERGY-TRANSFER; NANOCRYSTALS; EXCITATION; SIO2-FILMS;

D O I：

10.1016/j.tsf.2010.06.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Alternately Er-doped Si-rich Al2O3 multilayer film, which consists of 20 layers of alternate Er-Si-codoped Al2O3 and Si-doped Al2O3 layers, has been synthesized by magnetron cosputtering. The structural and optical properties of the multilayer film as a function of annealing temperature in the range of 700-1100 degrees C were studied by Raman, X-ray diffraction, high-resolution transmission electron microscopy and photoluminescence (PL). The results show that Si atoms in the multilayer film cluster and have been crystallized gradually into Si nanocrystals with increasing annealing temperature to 950 degrees C. Upon annealing above 950 degrees C, however, the Er2O3 and Er4Al2O9 phases have been formed, resulting in a rapid decrease of PL intensity. It is necessary to control the size and spatial distributions of Si-NCs and optically activate Er3+ ions in order to improve PL response. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：6993 / 6996

页数：4

共 24 条

[1] Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films [J].

Chryssou, CE ;

Kenyon, AJ ;

Iwayama, TS ;

Pitt, CW ;

Hole, DE .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2011-2013

[2] Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation [J].

Ding, L. ;

Chen, T. P. ;

Liu, Y. ;

Yang, M. ;

Wong, J. I. ;

Liu, Y. C. ;

Trigg, A. D. ;

Zhu, F. R. ;

Tan, M. C. ;

Fung, S. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

[3] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].

Fujii, M ;

Yoshida, M ;

Kanzawa, Y ;

Hayashi, S ;

Yamamoto, K .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200

[4] Photoluminescence from SiO2 films containing Si nanocrystals and Er:: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+ [J].

Fujii, M ;

Yoshida, M ;

Hayashi, S ;

Yamamoto, K .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4525-4531

[5] Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films [J].

Iacona, F ;

Bongiorno, C ;

Spinella, C ;

Boninelli, S ;

Priolo, F .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3723-3732

[6] Spectrally resolved energy transfer from excitons in Si nanocrystals to Er ions [J].

Imakita, K ;

Fujii, M ;

Hayashi, S .

PHYSICAL REVIEW B, 2005, 71 (19)

[7] Optical properties of rare earth ion (Nd3+, Er3+ and Tb3+)-doped alumina films prepared by the sol-gel method [J].

Ishizaka, T ;

Kurokawa, Y ;

Makino, T ;

Segawa, Y .

OPTICAL MATERIALS, 2001, 15 (04) :293-299

[8] Strong exciton-erbium coupling in Si nanocrystal-doped SiO2 [J].

Kik, PG ;

Brongersma, ML ;

Polman, A .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2325-2327

[9] Photo-properties of rare earth ion (Er3+, Eu3+ and Sm3+)-doped alumina films prepared by the sol-gel method [J].

Kurokawa, Y ;

Ishizaka, T ;

Ikoma, T ;

Tero-Kubota, S .

CHEMICAL PHYSICS LETTERS, 1998, 287 (5-6) :737-741

[10] Broadband sensitizers for erbium-doped planar optical amplifiers: review [J].

Polman, A ;

van Veggel, FCJM .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2004, 21 (05) :871-892

← 1 2 3 →