Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor (vol 107, 203507, 2015)

被引：0
|
作者：
Zhou, Xin [1 ]
Qiao, Ming [1 ]
He, Yitao [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 09期
关键词：
D O I：
10.1063/1.4943206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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