A 1.2V supply 0.58 ppm/°C CMOS bandgap voltage reference

被引:5
作者
Hu, Jinlong [1 ]
Xu, Huachao [2 ]
Zhang, Yuanzhi [3 ]
Sun, Jie [1 ]
Du, Tao [2 ]
Lu, Chao [3 ]
Li, Guofeng [2 ]
机构
[1] Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Complex Syst Control Theory & Applicat Ke, Tianjin, Peoples R China
[2] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin Key Lab Optoelect Sensor & Sensing Networ, Tianjin, Peoples R China
[3] Southern Illinois Univ Carbondale, Dept Elect & Comp Engn, Carbondale, IL USA
关键词
bandgap voltage reference; CMOS; temperature coefficient;
D O I
10.1587/elex.15.20180521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A precision curvature-compensated bandgap reference (BGR) is proposed and implemented using a standard 0.18-mu m CMOS process. With a new and precise circuit configuration, the thermal nonlinearity of emitter-base voltages can be fully compensated, achieving an ultra-low temperature coefficient (TC) of 0.58 ppm/degrees C from -40 degrees C to 110 degrees C. The minimum required supply voltage is 1.2V and the current consumption at 27 degrees C is 48 mu A. At 27 degrees C, the line regulation performance is 0.015%/V with a supply voltage range of 1.2V to 1.8V.
引用
收藏
页数:6
相关论文
共 10 条
[1]   A Novel Wide-Temperature-Range, 3.9 ppm/°C CMOS Bandgap Reference Circuit [J].
Andreou, Charalambos M. ;
Koudounas, Savvas ;
Georgiou, Julius .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (02) :574-581
[2]   A 1.2-V 4.2-ppm/°C High-Order Curvature-Compensated CMOS Bandgap Reference [J].
Duan, Quanzhen ;
Roh, Jeongjin .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62 (03) :662-670
[3]   New curvature-compensation technique for CMOS bandgap reference with sub-1-V operation [J].
Ker, Ming-Dou ;
Chen, Jung-Sheng .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2006, 53 (08) :667-671
[4]  
Leung KN, 2002, IEEE J SOLID-ST CIRC, V37, P526, DOI 10.1109/4.991391
[5]   A Novel 1.2-V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference [J].
Ma, Bill ;
Yu, Fengqi .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (04) :1026-1035
[6]   Curvature-compensated BiCMOS bandgap with 1-V supply voltage [J].
Malcovati, P ;
Maloberti, F ;
Fiocchi, C ;
Pruzzi, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (07) :1076-1081
[7]  
Rincon-Mora G.A., 2002, VOLTAGE REFERENCES D
[8]   A Sub-1-V low-noise bandgap voltage reference [J].
Sanborn, Keith ;
Ma, Dongsheng ;
Ivanov, Vadim .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (11) :2466-2481
[9]   A novel 0.84 ppm/°C CMOS curvature-compensated bandgap with 1.2 V supply voltage [J].
Xu, Huachao ;
Zhang, Yuanzhi ;
Yan, Xiaobing ;
Wang, Jin ;
Lu, Chao ;
Li, Guofeng .
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2018, 91 :66-74
[10]   A new curvature-corrected CMOS bandgap voltage reference [J].
Zawawi, Ruhaifi Abdullah ;
Sidek, Othman .
IEICE ELECTRONICS EXPRESS, 2012, 9 (04) :240-244