Irradiation-induced recovery of disorder in gallium nitride

被引：18

作者：

Jiang, W ^{[1
]}

Weber, WJ ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Richland, WA 99352 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.1594282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride has been irradiated to two fluences with energetic Au2+ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in disorder recovery only in the near-surface region at low fluence. However, simultaneous irradiation with 5.4 MeV Si2+ ions during annealing at 873 K induced significant recovery over the entire damage profile at both low and high fluences. The irradiation-enhanced recovery is primarily attributed to defect-stimulated recovery and epitaxial recrystallization processes due to the creation of mobile Frenkel pairs. (C) 2003 American Institute of Physics.

引用

页码：458 / 460

页数：3

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