Fundamental aspects of SNMS for thin film characterization: Experimental studies and computer simulations

被引:19
作者
Husinsky, W
Betz, G
机构
[1] Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien
基金
奥地利科学基金会;
关键词
computer simulation; sputtering; depth profiling; laser irradiation;
D O I
10.1016/0040-6090(95)06954-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The idea of secondary neutral mass spectroscopy (SNMS) as a tool for surface analysis dates back to the early 1970s. Recently, due to the development of new and effective post ionization tools, i.e, lasers, this method has become an interesting alternative to more conventional methods for various applications in surface analysis, as for instance depth profiling or characterization of thin films. SNMS, in general, involves a more complicated apparatus than other techniques, due to the additional post-ionizing stage. However, in the last few years it has been demonstrated by many groups that for several situations SNMS offers substantial advantages as compared with conventional methods, in particular secondary ion mass spectrometry. In this paper we will evaluate the current situation of SNMS, in particular laser-SNMS, for applications related to the field of thin film research. On behalf of experimental studies and computer simulations of various phenomena related to SNMS we will show the possibilities, advantages and also problems associated with the method.
引用
收藏
页码:289 / 309
页数:21
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