Radiation defects and doping of SiC with phosphorus by Nuclear Transmutation Doping (NTD)

被引：5

作者：

Heissenstein, H ^{[1
]}

Sadowski, H ^{[1
]}

Peppermüller, C ^{[1
]}

Helbig, R ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

C-V; defect; Hall effect; LTPL; neutron; phosphorus;

D O I：

10.4028/www.scientific.net/MSF.338-342.853

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We irradiated 4H and 6H SiC samples with various neutron (further: N) fluences of different energetic distributions. Then the samples were sucessively annealed between 600 degreesC and 1850 degreesC and thereafter characterized by Fourier-Transform-Infra-Red-spectroscopy (FTIR), Low-Temperature-Photo-Luminescence (LTPL), Hall-effect, I-V, C-V characteristcs were carried out. It is shown that fast neutrons (FN) produce uppermost defects and samples irradiated with nearby thermal fluences show approximately the same behaviour after annealing at 1500-1650 degreesC as "as-grown" samples, Whereas one has to consider the surface destruction due to annealing processes.

引用

页码：853 / 856

页数：4

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