Large-signal-modulation of high-efficiency light-emitting diodes for optical communication

被引:51
作者
Windisch, R
Knobloch, A
Kuijk, M
Rooman, C
Dutta, B
Kiesel, P
Borghs, G
Döhler, GH
Heremans, P
机构
[1] IMEC, B-3001 Heverlee, Belgium
[2] Univ Erlangen Nurnberg, Inst Tech Phys 1, D-91058 Erlangen, Germany
[3] Free Univ Brussels, ETRO LAMI, B-1050 Brussels, Belgium
关键词
light-emitting diodes; optical communication; spontaneous emission; p-n heterojunctions;
D O I
10.1109/3.892565
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamic behavior of high-efficiency light-emitting diodes (LEDs) is investigated theoretically and experimentally. A detailed theoretical description of the switch-on and switch-off transients of LEDs is derived. In the limit of small-signal modulation, the well-established exponential behavior is obtained. However, in the case of high injection, which is easily reached for thin active layer LEDs, the small-signal time constant is found to be up to a factor of two faster than the radiative recombination lifetime. Using such quantum-well LEDs, we have demonstrated optical data transfer,vith wide open eye diagrams at bit rates up to 2 Gbit/s, In addition, we have combined the use of thin active layers with the concept of surface-textured thin-film LEDs, which allow a significant improvement in the light extraction efficiency. With LEDs operating at 0.5 Gbit/s and 1 Gbit/s, we have achieved external quantum efficiencies of 36% and 29%, respectively.
引用
收藏
页码:1445 / 1453
页数:9
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