Modelling effect of parasitics in plasmonic FETs

被引：8

作者：

Gutin, A. ^{[1
]}

Ytterdal, T. ^{[2
]}

Muraviev, Andrey ^{[1
]}

Shur, M. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

[2] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, Norway

来源：

SOLID-STATE ELECTRONICS | 2015年 / 104卷

关键词：

Field effect transistors; Terahertz; Spice modelling; Plasmonics; TERAHERTZ RADIATION;

D O I：

10.1016/j.sse.2014.10.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The terahertz SPICE PET model has been experimentally validated in Si CMOS and InGaAs HEMTs up to 4.5 THz and updated to account for parasitic gate fringing capacitance and parasitic source and drain resistance. The model is in good agreement with experimental data at low and high THz field intensities. We also show that introducing additional capacitances linking the drain and gate electrodes may lead to enhancement of the THz plasmonic detector response at lower THz frequencies. The simulation results of the plasmonic detector response to a single terahertz pulse are in good agreement with our measured data. (C) 2014 Elsevier Ltd. All rights reserved.

引用

收藏

页码：75 / 78

页数：4

相关论文

共 26 条

[1] Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states [J].

Aizin, Gregory R. ;

Dyer, Gregory C. .

PHYSICAL REVIEW B, 2012, 86 (23)

[2] Performance and performance variations of sub-1 THz detectors fabricated with 0.15 μm CMOS foundry process [J].

Boppel, S. ;

Lisauskas, A. ;

Krozer, V. ;

Roskos, H. G. .

ELECTRONICS LETTERS, 2011, 47 (11) :661-662

[3] UNIFIED CHARGE CONTROL MODEL AND SUBTHRESHOLD CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

BYUN, YH ;

LEE, K ;

SHUR, M .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :50-53

[4]

Dunga M V., 2006, Bsim4. 6.0 Mosfet Model

[5] SHALLOW-WATER ANALOGY FOR A BALLISTIC FIELD-EFFECT TRANSISTOR - NEW MECHANISM OF PLASMA-WAVE GENERATION BY DC CURRENT [J].

DYAKONOV, M ;

SHUR, M .

PHYSICAL REVIEW LETTERS, 1993, 71 (15) :2465-2468

[6] Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid [J].

Dyakonov, M ;

Shur, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) :380-387

[7] Terahertz detection by GaN/AlGaN transistors [J].

El Fatimy, A. ;

Tombet, S. Boubanga ;

Teppe, F. ;

Knap, W. ;

Veksler, D. B. ;

Rumyantsev, S. ;

Shur, M. S. ;

Pala, N. ;

Gaska, R. ;

Fareed, Q. ;

Hu, X. ;

Seliuta, D. ;

Valusis, G. ;

Gaquiere, C. ;

Theron, D. ;

Cappy, A. .

ELECTRONICS LETTERS, 2006, 42 (23) :1342-1344

[8] Enhanced Plasma Wave Detection of Terahertz Radiation Using Multiple High Electron-Mobility Transistors Connected in Series [J].

Elkhatib, Tamer A. ;

Kachorovskii, Valentin Y. ;

Stillman, William J. ;

Veksler, Dmitry B. ;

Salama, Khaled N. ;

Zhang, Xi-Cheng ;

Shur, Michael S. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (02) :331-339

[9] Plasmonic terahertz detector response at high intensities [J].

Gutin, A. ;

Kachorovskii, V. ;

Muraviev, A. ;

Shur, M. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)

[10]

Gutin A, 2012, LEST EASTM C HIGH PE, P1