β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

被引：39

作者：

Huang, Hsien-Chih ^{[1
]}

Ren, Zhongjie ^{[2
]}

Bhuiyan, A. F. M. Anhar Uddin ^{[3
]}

Feng, Zixuan ^{[3
]}

Yang, Zhendong ^{[2
]}

Luo, Xixi ^{[2
]}

Huang, Alex Q. ^{[2
]}

Green, Andrew ^{[4
]}

Chabak, Kelson ^{[4
]}

Zhao, Hongping ^{[3
,5
]}

Li, Xiuling ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Texas Austin, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[4] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[5] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2022年 / 121卷 / 05期

基金：

美国国家科学基金会;

关键词：

TRANSISTORS; FIGURE; MERIT;

D O I：

10.1063/5.0096490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, beta-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating beta-Ga2O3 substrates are demonstrated. beta-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (R-on,R-sp) of 6.5 m Omega.cm(2) and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis. Published under an exclusive license by AIP Publishing.

引用

页数：7

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