High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes

被引：68

作者：

Bai, Xiaogang ^{[1
]}

Guo, Xiangyi ^{[1
]}

Mcintosh, Dion C. ^{[1
]}

Liu, Han-Din ^{[1
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Sch Engn & Appl Sci, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 11-12期

关键词：

avalanche photodiodes (APDs); linear mode; silicon; carbide (SiC); ultraviolet (UV);

D O I：

10.1109/JQE.2007.905031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000 a 100-mu m-diameter device exhibits dark current of 5 pA (63 nA/cm(2))corresponding to primary multiplied dark current of 5 fA (63 pA/cm(2)). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda =280 nm. The excess noise factor corresponds to kappa = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.

引用

页码：1159 / 1162

页数：4

共 17 条

[1] GaN avalanche photodiodes [J].

Carrano, JC ;

Lambert, DJH ;

Eiting, CJ ;

Collins, CJ ;

Li, T ;

Wang, S ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :924-926

[2] Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode [J].

Collins, CJ ;

Chowdhury, U ;

Wong, MM ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3754-3756

[3]

GUO X, 2003, ELECTRON LETT, V39, P1673

[4] Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer [J].

Guo, Xiangyi ;

Beck, Ariane L. ;

Huang, Zhihong ;

Duan, Ning ;

Campbell, Joe C. ;

Emerson, David ;

Sumakeris, Joseph J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2259-2265

[5] Study of reverse dark current in 4H-SiC avalanche photodiodes [J].

Guo, XY ;

Beck, AL ;

Li, XW ;

Campbell, JC ;

Emerson, D ;

Sumakeris, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (04) :562-567

[6] Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes [J].

Guo, XY ;

Rowland, LB ;

Dunne, GT ;

Fronheiser, JA ;

Sandvik, PM ;

Beck, AL ;

Campbell, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) :136-138

[7] Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain [J].

Guo, XY ;

Beck, AL ;

Campbell, JC ;

Emerson, D ;

Sumakeris, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (10) :1213-1216

[8] Ionization rates and critical fields in 4H silicon carbide [J].

Konstantinov, AO ;

Wahab, Q ;

Nordell, N ;

Lindefelt, U .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :90-92

[9] GaN avalanche photodiodes grown by hydride vapor-phase epitaxy [J].

McIntosh, KA ;

Molnar, RJ ;

Mahoney, LJ ;

Lightfoot, A ;

Geis, MW ;

Molvar, KM ;

Melngailis, I ;

Aggarwal, RL ;

Goodhue, WD ;

Choi, SS ;

Spears, DL ;

Verghese, S .

APPLIED PHYSICS LETTERS, 1999, 75 (22) :3485-3487

[10] Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes [J].

Ng, BK ;

Yan, F ;

David, JPR ;

Tozer, RC ;

Rees, GJ ;

Qin, C ;

Zhao, JH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (09) :1342-1344

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