Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

被引：47
作者：
Li, Yingtao [1 ,2 ]
Long, Shibing [1 ]
Lv, Hangbing [1 ]
Liu, Qi [1 ]
Wang, Yan [1 ,2 ]
Zhang, Sen [1 ]
Lian, Wentai [1 ]
Wang, Ming [1 ]
Zhang, Kangwei [1 ]
Xie, Hongwei [1 ,2 ]
Liu, Su [2 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源：
NANOTECHNOLOGY | 2011年 / 22卷 / 25期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1088/0957-4484/22/25/254028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO2-based resistive memory devices has been investigated. Compared with the Cu/ZrO2/Pt structure device, by embedding a thin TiOx layer between the ZrO2 and the Cu top electrode, the Cu/TiOx-ZrO2/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiOx-ZrO2/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
引用
收藏
页数：5
相关论文
共 17 条
  • [1] Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
    Banno, Naoki
    Sakamoto, Toshitsugu
    Iguchi, Noriyuki
    Sunamura, Hiroshi
    Terabe, Kazuya
    Hasegawa, Tsuyoshi
    Aono, Masakazu
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 3283 - 3287
  • [2] Nonpolar nonvolatile resistive switching in Cu doped ZrO2
    Guan, Weihua
    Long, Shibing
    Liu, Qi
    Liu, Ming
    Wang, Wei
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) : 434 - 437
  • [3] On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
    Guan, Weihua
    Liu, Ming
    Long, Shibing
    Liu, Qi
    Wang, Wei
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (22)
  • [4] Kund M, 2005, INT EL DEVICES MEET, P773
  • [5] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
    Lee, D
    Choi, H
    Sim, H
    Choi, D
    Hwang, H
    Lee, MJ
    Seo, SA
    Yoo, IK
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) : 719 - 721
  • [6] Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications
    Li, Yingtao
    Long, Shibing
    Zhang, Manhong
    Liu, Qi
    Shao, Lubing
    Zhang, Sen
    Wang, Yan
    Zuo, Qingyun
    Liu, Su
    Liu, Ming
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) : 117 - 119
  • [7] Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
    Lin, Chih-Yang
    Wu, Chen-Yu
    Wu, Chung-Yi
    Lee, Tzyh-Cheang
    Yang, Fu-Liang
    Hu, Chenming
    Tseng, Tseung-Yuen
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) : 366 - 368
  • [8] Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted Ti Ions
    Liu, Qi
    Long, Shibing
    Wang, Wei
    Zuo, Qingyun
    Zhang, Sen
    Chen, Junning
    Liu, Ming
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1335 - 1337
  • [9] Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
    Liu, Qi
    Dou, Chunmeng
    Wang, Yan
    Long, Shibing
    Wang, Wei
    Liu, Ming
    Zhang, Manhong
    Chen, Junning
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (02)
  • [10] Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
    Russo, Ugo
    Kamalanathan, Deepak
    Ielmini, Daniele
    Lacaita, Andrea L.
    Kozicki, Michael N.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) : 1040 - 1047
12