SiC-B4C composites for synergistic enhancement of thermoelectric property

被引：52

作者：

Uehara, M ^{[1
]}

Shiraishi, R ^{[1
]}

Nogami, A ^{[1
]}

Enomoto, N ^{[1
]}

Hojo, J ^{[1
]}

机构：

[1] Kyushu Univ, Fac Engn, Dept Appl Chem, Higashi Ku, Fukuoka 8128581, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 02期

关键词：

B4C; composites; grain size; seebeck coefficient; SiC;

D O I：

10.1016/S0955-2219(03)00213-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC-B4C composites were fabricated by hot pressing of beta-SiC and B4C powder mixture. The Seebeck coefficient was determined at 300-900 degreesC in air. The SiC-B4C composites exhibited very high value. Especially, the Seebeck coefficient of SiC-30wt.%B4C composite was about 700 mu/K at 900 C. Such a high Seebeck coefficient is very attractive. Monolithic SiC and B4C had the Seebeck coefficient of 100-400 muV/K, respectively. In SiC-B4C composite system, the Seebeck coefficient had been increased by the combination of SiC and B4C. In TEM observation, many stacking faults were observed in SiC-B4C composites. The presence of stacking faults may be one reason for the high Seebeck coefficient of SiC-B4C composite. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：409 / 412

页数：4

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