Tellurene: its physical properties, scalable nanomanufacturing, and device applications

被引：269

作者：

Wu, Wenzhuo ^{[1
,2
,3
,4
]}

Qiu, Gang ^{[3
,5
]}

Wang, Yixiu ^{[1
,2
,3
]}

Wang, Ruoxing ^{[1
,2
,3
]}

Ye, Peide ^{[3
,5
]}

机构：

[1] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Flex Lab, W Lafayette, IN 47907 USA

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[4] Purdue Univ, Regenstrief Ctr Healthcare Engn, W Lafayette, IN 47907 USA

[5] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

CHEMICAL SOCIETY REVIEWS | 2018年 / 47卷 / 19期

基金：

美国国家科学基金会;

关键词：

NANOSTRUCTURES; SEMICONDUCTOR; CONDUCTIVITY; TRANSISTORS; NANOWIRES; NANOBELTS;

D O I：

10.1039/c8cs00598b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tellurium (Te) has a trigonal crystal lattice with inherent structural anisotropy. Te is multifunctional, e.g., semiconducting, photoconductive, thermoelectric, piezoelectric, etc., for applications in electronics, sensors, optoelectronics, and energy devices. Due to the inherent structural anisotropy, previously reported synthetic methods predominantly yield one-dimensional (1D) Te nanostructures. Much less is known about 2D Te nanostructures, their processing schemes, and their material properties. This review focuses on the synthesis and morphology control of emerging 2D tellurene and summarizes the latest developments in understanding the fundamental properties of monolayer and few-layer tellurene, as well as the recent advances in demonstrating prototypical tellurene devices. Finally, the prospects for future research and application opportunities as well as the accompanying challenges of 2D tellurene are summarized and highlighted.

引用

页码：7203 / 7212

页数：10

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