Effect of Tm doping on the properties of electrodeposited ZnO nanorods

被引：7

作者：

Fang, F. ^{[1
]}

Ng, A. M. C. ^{[1
]}

Chen, X. Y. ^{[1
]}

Djurisic, A. B. ^{[1
]}

Zhong, Y. C. ^{[2
]}

Wong, K. S. ^{[2
]}

Fong, P. W. K. ^{[3
]}

Lui, H. F. ^{[3
]}

Surya, C. ^{[3
]}

Chan, W. K. ^{[4
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China

[4] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 125卷 / 03期

关键词：

ZnO nanorods; Photoluminescence; LUMINESCENCE; PHOTOLUMINESCENCE; IONS;

D O I：

10.1016/j.matchemphys.2010.09.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO nanorods were fabricated by electrodeposition from solution with and without thulium precursors and characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence and time-resolved photoluminescence. In spite of the low incorporation of thulium into ZnO nanorods, both the morphology and the optical properties of the nanorods were affected by the presence of thulium. The light emitting diodes with ZnO nanorods with and without Tm have been demonstrated. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：813 / 817

页数：5

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