Modeling GaN: Powerful but Challenging

被引：71

作者：

Dunleavy, Lawrence ^{[1
,2
]}

Baylis, Charles ^{[3
]}

Curtice, Walter ^{[4
]}

Connick, Rick ^{[5
]}

机构：

[1] Modelithics Inc, Tampa, FL USA

[2] Univ S Florida, Dept Elect Engn, Ctr Wireless & Microwave Informat Syst, Tampa, FL 33620 USA

[3] Baylor Univ, Dept Elect & Comp Engn, Wireless & Microwave Circuits & Syst Program, Waco, TX 76798 USA

[4] WR Curtice Consulting, Washington Crossing, PA USA

[5] Triquint Semicond, Apopka, FL USA

来源：

关键词：

DEVICE MODEL; HEMTS; GANHEMTS;

D O I：

10.1109/MMM.2010.937735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：82 / 96

页数：15

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