Modeling GaN: Powerful but Challenging

被引：73
作者：
Dunleavy, Lawrence [1 ,2 ]
Baylis, Charles [3 ]
Curtice, Walter [4 ]
Connick, Rick [5 ]
机构：
[1] Modelithics Inc, Tampa, FL USA
[2] Univ S Florida, Dept Elect Engn, Ctr Wireless & Microwave Informat Syst, Tampa, FL 33620 USA
[3] Baylor Univ, Dept Elect & Comp Engn, Wireless & Microwave Circuits & Syst Program, Waco, TX 76798 USA
[4] WR Curtice Consulting, Washington Crossing, PA USA
[5] Triquint Semicond, Apopka, FL USA
来源：
IEEE MICROWAVE MAGAZINE | 2010年 / 11卷 / 06期
关键词：
DEVICE MODEL; HEMTS; GANHEMTS;
D O I：
10.1109/MMM.2010.937735
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：82 / 96
页数：15
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