Migration healing of surface relief during the formation of nanocrystals in a microwave low-pressure gas discharge

被引：0

作者：

Nefedov, D. V. ^{[1
]}

Yafarov, R. K. ^{[1
]}

机构：

[1] Russian Acad Sci, Saratov Branch, Inst Radio Engn & Elect, Saratov 410019, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 11期

关键词：

61.30.Hn;

D O I：

10.1134/S1063785007110120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied conditions for the synthesis of nanodimensional silicon islands (quantum dots) in a microwave low-pressure gas discharge plasma on noncrystalline substrates with a weak interaction at the deposit-substrate interface. It is established that the formation of nanoislands proceeds via the leveling (healing) of depressions on the substrate surface. A mechanism of the influence of the parameters of deposition on the kinetics of formation of nanoislands is proposed.

引用

页码：933 / 935

页数：3

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