Electron and hole transport in poly(p-phenylene vinylene) devices

被引：735
作者：
Blom, PWM
deJong, MJM
Vleggaar, JJM
机构：
[1] Philips Research Laboratories, 5656 AA Eindhoven
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期
关键词：
D O I：
10.1063/1.116583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of electrons and holes in poly(dialkoxy-p-phenylene vinylene) (PPV) are investigated by current-voltage measurements using Ca as an electron and indium-tin-oxide as a hole injecting contact. Both the electron and hole currents are dominated by the bulk conduction properties of the PPV, in contrast to previous reports. The hole current is governed by bulk space-charge limited conductivity and a hole mobility of 0.5 x 10(-6) cm(2)/V s is determined. The electron current is strongly reduced by the presence of traps with a total density of 10(18) cm(-3). (C) 1996 American Institute of Physics.
引用
收藏
页码：3308 / 3310
页数：3
相关论文
共 13 条
  • [11] Lampert M. A., 1970, CURRENT INJECTION SO
  • [12] PARKER ID, 1994, J APPL PHYS, V75, P1657
  • [13] FIELD-EFFECT TRANSISTORS BASED ON POLY(P-PHENYLENE VINYLENE) DOPED BY ION-IMPLANTATION
    PICHLER, K
    JARRETT, CP
    FRIEND, RH
    RATIER, B
    MOLITON, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3523 - 3527
12