Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p-i-n GaAs solar cells

被引：3

作者：

Fukuyama, Atsuhiko ^{[1
]}

Matsuochi, Kouki ^{[1
]}

Nakamura, Tsubasa ^{[1
]}

Takeda, Hideaki ^{[1
]}

Toprasertpong, Kasidit ^{[2
]}

Sugiyama, Masakazu ^{[2
]}

Nakano, Yoshiaki ^{[3
]}

Suzuki, Hidetoshi ^{[1
]}

Ikari, Tetsuo ^{[1
]}

机构：

[1] Univ Miyazaki, Fac Engn, Miyazaki 8892192, Japan

[2] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1130032, Japan

[3] Univ Tokyo, Res Ctr Adv Sci & Technol, Bunkyo Ku, Tokyo 1130032, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 08期

关键词：

EFFICIENCY; GAP; ELECTROREFLECTANCE; SEMICONDUCTORS; PARAMETERS; TIME; SI;

D O I：

10.7567/JJAP.56.08MC07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the superlattice (SL) solar cell performance, we carried out an accurate estimation of transition energies and miniband widths and focused on understanding of the optical properties of the SL structure using piezoelectric photothermal (PPT), photoreflectance (PR), and photoluminescence (PL) methods. Solar cell structure samples with different barrier thicknesses from 2.0 to 7.8nm in quantum wells were prepared. From the PR and theoretical calculation, the formation of a miniband was confirmed. The PL peak showed a redshift and a decrease in signal intensity with decreasing barrier thickness, which were explained by carrier separation as a consequence of electron transportation through the miniband without recombination. The PPT signal intensities of the SL were still large even for the 2.0-nm-barrier-thickness sample. It is conceivable that the multiple-phonon emission during carrier transport through the miniband was detected. The usefulness of multidimensional investigation by using the above three methods is clearly demonstrated. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

共 32 条

[1] Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells [J].