Growth and Characterization of Pure and Sm-Doped Sb2Te3 Single Crystal

被引:3
作者
Kumar, Kapil [1 ,2 ]
Kumar, Yogesh [1 ,2 ]
Awana, V. P. S. [1 ,2 ]
机构
[1] CSIR, Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
关键词
Topological insulator; Magnetic doping; Magnetoresistance; Hikami-Larkin-Nagaoka model; Quantum scattering; Surface states;
D O I
10.1007/s10948-022-06363-w
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, we report single crystalline growth, characterization, and magneto-transport study of SmxSb2-xTe3 (x = 0 and 0.05) topological insulator. Single crystals were grown by solid state reaction by following self-flux method. Phase purity, single crystalline growth, and layered structure were confirmed by X-ray diffraction (XRD) spectra and scanning electron microscopy (SEM) images. Elemental composition was extracted by using energy dispersive X-ray analysis (EDAX) and Raman spectra were obtained at room temperature to study the vibrational modes or grown SmxSb2-xTe3 single crystal. Sb2Te3 shows the approximate to 550% magnetoresistance at 12 Tesla and 2 K, which further reduced to approximate to 210% at 12 Tesla and 2 K by doping of Sm in Sb2Te3. A v-type cusp was observed in low magnetic field regime (<= 1 Tesla) at all measured temperatures for both crystals, which was analyzed by using Hikami-Larkin-Nagaoka (HLN) equation. The extracted parameters alpha and phase coherence length (L-phi) show the presence of weak anti-localization effect in both crystals. Furthermore, to study the effect of temperature and magnetic field on conduction, field-dependent quadratic term and linear term were added in conventional HLN model which explains the contribution of quantum scattering and bulk contribution in magnetoconductivity, respectively.
引用
收藏
页码:2601 / 2608
页数:8
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