Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface

被引:7
|
作者
Pallecchi, I. [1 ,2 ]
Telesio, F. [1 ,2 ]
Marre, D. [1 ,2 ]
Li, D. [3 ]
Gariglio, S. [3 ]
Triscone, J. -M. [3 ]
Filippetti, A. [4 ]
机构
[1] CNR SPIN UOS Genova, Via Dodecaneso 33, I-16146 Genoa, Italy
[2] Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy
[3] Univ Geneva, DQMP, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland
[4] CNR IOM UOS Cagliari, SP Monserrato Sestu Km 0,700, I-09042 Monserrato, Ca, Italy
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
THERMOELECTRIC SEEBECK COEFFICIENT; 2-DIMENSIONAL ELECTRON-GAS; OXIDE INTERFACES; WELL STRUCTURES; 3D PHONONS; MERIT; THERMOPOWER; FIGURE; SUPERLATTICES; TEMPERATURE;
D O I
10.1103/PhysRevB.93.195309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface, we find a region below T = 50 K where thermopower is dominated by phonon drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values similar to mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface.
引用
收藏
页数:8
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