Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

被引：20
作者：
Bell, A
Harrison, I
Korakakis, D
Larkins, EC
Hayes, JM
Kuball, M
Grandjean, N
Massies, J
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[4] CNRS, CRHEA, F-06560 Valbonne, France
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期
关键词：
D O I：
10.1063/1.1327288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the deep level band (2.0-3.0 eV). Power resolved measurements indicate that the 3.424 eV emission is a donor-acceptor pair transition. In the deep level region peaks are observed in all spectra at 2.3 and 2.6 eV. This suggests that the 2.3 and 2.6 eV peaks are related and a model is proposed to explain this luminescence. (C) 2001 American Institute of Physics.
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收藏
页码：1070 / 1074
页数：5
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共 22 条
  • [1] Luminescence related to stacking faults in heteroepitaxially grown wurtzite GaN
    Albrecht, M
    Christiansen, S
    Salviati, G
    ZanottiFregonara, C
    Rebane, YT
    Shreter, YG
    Mayer, M
    Pelzmann, A
    Kamp, M
    Ebeling, KJ
    Bremser, MD
    Davis, RD
    Strunk, HP
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 293 - 298
  • [2] THE INFLUENCE OF OXYGEN ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAN CRYSTALS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    CHUNG, BC
    GERSHENZON, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 651 - 659
  • [3] On the nature of the 3.41 eV luminescence in hexagonal GaN
    Fischer, S
    Steude, G
    Hofmann, DM
    Kurth, F
    Anders, F
    Topf, M
    Meyer, BK
    Bertram, F
    Schmidt, M
    Christen, J
    Eckey, L
    Holst, J
    Hoffmann, A
    Mensching, B
    Rauschenbach, B
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 556 - 560
  • [4] ON P-TYPE DOPING IN GAN-ACCEPTOR BINDING-ENERGIES
    FISCHER, S
    WETZEL, C
    HALLER, EE
    MEYER, BK
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1298 - 1300
  • [5] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
    GLASER, ER
    KENNEDY, TA
    DOVERSPIKE, K
    ROWLAND, LB
    GASKILL, DK
    FREITAS, JA
    KHAN, MA
    OLSON, DT
    KUZNIA, JN
    WICKENDEN, DK
    [J]. PHYSICAL REVIEW B, 1995, 51 (19): : 13326 - 13336
  • [6] High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN
    Hayes, JM
    Kuball, M
    Bell, A
    Harrison, I
    Korakakis, D
    Foxon, CT
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2097 - 2099
  • [7] Study of GaN thin layers subjected to high-temperature rapid thermal annealing
    Katsavets, NI
    Laws, GM
    Harrison, I
    Larkins, EC
    Benson, TM
    Cheng, TS
    Foxon, CT
    [J]. SEMICONDUCTORS, 1998, 32 (10) : 1048 - 1053
  • [8] VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMAL ANNEALED P-TYPE LAYERS
    KHAN, MA
    CHEN, Q
    SKOGMAN, RA
    KUZNIA, JN
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (16) : 2046 - 2047
  • [9] Thermal stability of GaN investigated by Raman scattering
    Kuball, M
    Demangeot, F
    Frandon, J
    Renucci, MA
    Massies, J
    Grandjean, N
    Aulombard, RL
    Briot, O
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 960 - 962
  • [10] Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering
    Kuball, M
    Demangeot, F
    Frandon, J
    Renucci, MA
    Sands, H
    Batchelder, DN
    Clur, S
    Briot, O
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (04) : 549 - 551
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