Growth and study of self-organized Ge quantum wires on Si(111) substrates

被引：28

作者：

Jin, G ^{[1
]}

Tang, YS ^{[1
]}

Liu, JL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-organized Ge quantum wires were grown on regular atomic steps formed along [(1) over bar 10] direction on Si(111) substrates by annealing at 870 degrees C in vacuum. The samples were then studied by atomic force microscopy, polarization-dependent Raman scattering, and low temperature photoluminescence spectroscopy. The results suggest that good quality Ge quantum wires were formed and clear quantum confinement-induced quantization in the wires was observed. (C) 1999 American Institute of Physics. [S0003-6951(99)02417-1].

引用

页码：2471 / 2473

页数：3

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