Growth of free-standing non-polar GaN on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy

被引：4
|
作者：
Chou, Mitch M. C. [1 ]
Hang, D. R. [1 ]
Chen, Chenlong [1 ]
Li, Chu-An [1 ]
Lu, Jin-Wei [1 ]
Lee, Chun-Yu [1 ]
Tsay, Jenq-Dar [2 ]
Hsu, Chuck W. C. [3 ]
Liu, Calvin [3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan
[2] Ind Technol Res Inst, Opt Elect Res Lab, Hsinchu, Taiwan
[3] Sino American Silicon Prod Inc, Hsinchu, Taiwan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词：
GaN; VPE; morphology; structure; defect levels; photoluminescence; PLANE; DIODES; FILMS;
D O I：
10.1002/pssc.200983585
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Nonpolar free-standing m-plane GaN substrates were fabricated by hydride vapor phase epitaxy on (100) gamma-LiAlO2 substrates. The surface morphlogies were characterized by conventional optical microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction. Optical properties examined by photoluminescence spectroscopy exhibited a strong and sharp near near-band-edge emission peak at 3.43 eV, as well as a defect-related yellow emission. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：3
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