Ferroelectric (Pb,Sr)TiO3 epitaxial thin films on (001) MgO for room temperature high-frequency tunable microwave elements -: art. no. 142905

被引：58
作者：
Liu, SW [1 ]
Weaver, J
Yuan, Z
Donner, W
Chen, CL
Jiang, JC
Meletis, EI
Chang, W
Kirchoefer, SW
Horwitz, J
Bhalla, A
机构：
[1] Univ Houston, Dept Phys, Houston, TX 77204 USA
[2] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[3] Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA
[4] USN, Res Lab, Washington, DC 20375 USA
[5] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2081131
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric Pb0.35Sr0.65TiO3 (PSTO) thin films were grown on (001) MgO by using pulsed laser deposition. Microstructure studies from x-ray diffraction and electron microscopy indicate that the as-grown PSTO films have excellent single crystal quality and good epitaxial behavior with their c-axis oriented perpendicular to the plane of the films. The interface relationships between the PSTO films and MgO were determined to be [100](PSTO)//[100](MgO) and (001)(PSTO)//(001)(MgO). The high frequency dielectric property measurements (up to 20 GHz) reveal that the as-grown films have a high dielectric constant value above 1420 and very large dielectric tunability above 34% at room temperature. These results suggest that the as-grown PSTO thin films on MgO are a good candidate for developing room-temperature high-frequency tunable microwave elements. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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