共 39 条
Anisotropic thermoelectric properties of layered compound SnSe2
被引:66
作者:

Xu, Peipei
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Fu, Tiezheng
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h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Xin, Jiazhan
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h-index: 0
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Liu, Yintu
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h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Ying, Pingjun
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h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhao, Xinbing
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Pan, Hongge
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhu, Tiejun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
机构:
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
基金:
中国国家自然科学基金;
关键词:
SnSe2;
Thermoelectric materials;
Anisotropy;
Thermoelectric properties;
PERFORMANCE;
TEMPERATURE;
GROWTH;
D O I:
10.1016/j.scib.2017.11.015
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Similar to high performance SnSe thermoelectrics, SnSe2 is also a layered structured semiconductor. However, its anisotropic thermoelectric properties are less experimentally investigated. In this work, Cl-doped SnSe2 bulk materials are successfully prepared, and their thermal stability and anisotropic transport properties are systematically studied. Unexpectedly, different from the theoretical prediction and other typical layered thermoelectric compounds like Bi2Te3, the out-of-plane zT(c) value is higher than in-plane zT(a) for the same composition. The zT value is significantly enhanced by Cl doping. A maximum zTc of similar to 0.4 at 673 K is achieved in SnSe1.88Cl0.12, twice higher than previously reported Cl-doped SnSe2 synthesized by the solvothermal method. (C) 2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
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页码:1663 / 1668
页数:6
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