Microstructural studies of molybdenum silicide thin films by spectroscopic ellipsometry

被引：3

作者：

Srinivas, G ^{[1
]}

Vankar, VD ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,DELHI 110016,INDIA

来源：

MATERIALS LETTERS | 1997年 / 30卷 / 01期

关键词：

molybdenum silicide; thin films; silicon substrates; RTA annealing; spectroscopic ellipsometry; effective medium approximation; microstructural modelling;

D O I：

10.1016/S0167-577X(96)00167-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of compositions Mo25Si75 and Mo36Si64 were co-sputtered onto p-type silicon substrates and annealed using a rapid thermal annealing system. The spectroscopic ellipsometric studies were performed on samples which crystallized into the most stable MoSi2 tetragonal phase. The Bruggeman effective medium theory in a multiphase-multilayer mode was used to determine the microstructural details of these films. The microstructural modelling results indicated varied fractions of silicon and voids randomly mixed in the matrix of MoSi2. It was also observed that the composition of the SiO2 overlayer also varied with changes in the annealing temperature and was found to. depend on the starting composition.

引用

页码：35 / 40

页数：6

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