Fabrication of silica-shielded Ga-ZnS metal-semiconductor nanowire heterojunctions

被引：60
作者：
Hu, JQ
Bando, Y
Zhan, JH
Golberg, D
机构：
[1] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
来源：
ADVANCED MATERIALS | 2005年 / 17卷 / 16期
关键词：
D O I：
10.1002/adma.200500317
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Ga-ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermo-chemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga-ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.
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页码：1964 / +
页数：7
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