Low-Threshold Continuous-Wave Anti-Stokes Raman Lasing in Silicon Racetrack Resonators

被引:1
作者
Zhang, Yaojing [1 ]
Zhong, Keyi [1 ]
Zhou, Wen [1 ]
Tsang, Hon Ki [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
关键词
anti-Stokes Raman lasing; milliwatt pump threshold power; low-power all-optical wavelength converter; wide wavelength conversion range; silicon racetrack resonator; nonlinear optics; WAVELENGTH CONVERSION; LASER; AMPLIFICATION; SPECTROSCOPY; SCATTERING; EMISSION; DESIGN;
D O I
10.1021/acsphotonics.1c01326
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report the first experimental observation of continuous-wave anti-Stokes Raman lasing in a reverse-biased 2.8 mm long multimode silicon racetrack resonator with high quality factors (>106) at all the pump, Stokes, and anti-Stokes wavelengths. The anti-Stokes laser has a milliwatt pump threshold power. The laser output power is linearly proportional to both the Stokes output power and the pump power. The Stokes output power becomes saturated at higher pump powers and limits the maximum output power of the anti-Stokes wave. Besides, a low-power (milliwatt pump power) all-optical wavelength converter with a wide wavelength tuning range is experimentally demonstrated via the coherent anti-Stokes Raman scattering in this multimode waveguide. The pump power is 200x lower than the previous reports with comparable Stokes/anti-Stokes power conversion efficiency. The wavelength converter can operate in the wavelength conversion range of the whole telecom band with a wavelength conversion range of about 220 nm.
引用
收藏
页码:3462 / 3468
页数:7
相关论文
共 43 条
[1]   Widely tunable silicon Raman aser [J].
Ahmadi, Mohammad ;
Shi, Wei ;
LaRochelle, Sophie .
OPTICA, 2021, 8 (06) :804-810
[2]   Enhancement of slow and fast light devices characteristics, combining ring resonator with fiber bragg gratings [J].
Babaghorbani, Behnoosh ;
Kaatuzian, Hassan .
OPTIK, 2021, 228
[3]  
Boyraz O., 2004, IEICE Electronics Express, V1, DOI 10.1587/elex.1.435
[4]   Demonstration of a silicon Raman laser [J].
Boyraz, O ;
Jalali, B .
OPTICS EXPRESS, 2004, 12 (21) :5269-5273
[5]   Low threshold anti-Stokes Raman laser on-chip [J].
Choi, Hyungwoo ;
Chen, Dongyu ;
Du, Fan ;
Zeto, Rene ;
Armani, Andrea .
PHOTONICS RESEARCH, 2019, 7 (08) :926-932
[6]   Influence of nonlinear absorption on Raman amplification in Silicon waveguides [J].
Claps, R ;
Raghunathan, V ;
Dimitropoulos, D ;
Jalali, B .
OPTICS EXPRESS, 2004, 12 (12) :2774-2780
[7]   Observation of stimulated Raman amplification in silicon waveguides [J].
Claps, R ;
Dimitropoulos, D ;
Raghunathan, V ;
Han, Y ;
Jalali, B .
OPTICS EXPRESS, 2003, 11 (15) :1731-1739
[8]   Observation of Raman emission in silicon waveguides at 1.54 μm [J].
Claps, R ;
Dimitropoulos, D ;
Han, Y ;
Jalali, B .
OPTICS EXPRESS, 2002, 10 (22) :1305-1313
[9]   Anti-Stokes Raman conversion in silicon waveguides [J].
Claps, R ;
Raghunathan, V ;
Dimitropoulos, D ;
Jalali, B .
OPTICS EXPRESS, 2003, 11 (22) :2862-2872
[10]   Chip-Based Resonance Raman Spectroscopy Using Tantalum Pentoxide Waveguides [J].
Coucheron, David A. ;
Wadduwage, Dushan N. ;
Murugan, G. Senthil ;
So, Peter T. C. ;
Ahluwalia, Balpreet S. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (14) :1127-1130