Terahertz detection with δ-doped GaAs/AlAs multiple quantum wells

被引：3

作者：

Seliuta, D. ^{[1
]}

Cechavicius, B. ^{[1
]}

Kavaliauskas, J. ^{[1
]}

Krivaite, G. ^{[1
]}

Grigelionis, I. ^{[1
]}

Balakauskas, S. ^{[1
]}

Valusis, G. ^{[1
]}

Sherliker, B. ^{[2
]}

Halsall, M. P. ^{[2
]}

Lachab, M. ^{[3
]}

Khanna, S. P. ^{[3
]}

Harrison, P. ^{[3
]}

Linfield, E. H. ^{[3
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester, Lancs, England

[3] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.113.909

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

引用

页码：909 / 912

页数：4

共 6 条

[1] Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells [J].