Possible failure modes in Press-Pack IGBTs

被引：73

作者：

Tinschert, Lukas ^{[1
,2
]}

Ardal, Atle Rygg ^{[3
]}

Poller, Tilo ^{[1
,2
]}

Bohllaender, Marco ^{[1
,2
]}

Hemes, Magnar ^{[3
]}

Lutz, Josef ^{[1
,2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect, Chemnitz, Germany

[2] Tech Univ Chemnitz, EMC, Chemnitz, Germany

[3] SINTEF Energi AS, Trondheim, Norway

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 06期

关键词：

Press-Pack; IGBT; Packaging; Simulation; Power Cycling; Reliability;

D O I：

10.1016/j.microrel.2015.02.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure. A microscopy analysis has been performed on some of the failed devices, and they have all failed in a very similar manner. In order to gain additional information about the thermal-mechanical stress, a detailed 3D Finite Element Method (FEM)-analysis has been conducted. The combined results from power cycling, microscopy and FEM have been concluded to two possible failure modes in Press-Pack IGBTs: Gate oxide damage and micro arcing. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：903 / 911

页数：9

共 16 条

[1]

Awiszus B., 2012, Grundlagen der Fertigungstechnik, V5

[2]

Bohllander M, 2014, THESIS TU CHEMNITZ

[3]

Bohllander M, 2011, PCIM

[4] Power cycling on press-pack IGBTs: measurements and thermomechanical simulation [J].

Cova, P ;

Nicoletto, G ;

Pirondi, A ;

Portesine, M ;

Pasqualetti, M .

MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :1165-1170

[5]

D'Arco S, 2012, P 9 INT MULT SYST SI

[6]

D'Arco S., 2012, ELECT SYSTEMS AIRCRA, P1

[7]

Eichner S, 2004, IAS OCT

[8]

Hansen Peter, 2007, 2007 European Conference on Power Electronics and Applications, P1, DOI 10.1109/EPE.2007.4417406

[9] Innovative press pack modules for high power IGBT's [J].

Kaufmann, S ;

Lang, T ;

Chokhawala, R .

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, :59-62

[10]

Lutz J, 2011, SEMICONDUCTOR POWER DEVICES: PHYSICS, CHARACTERISTICS, RELIABILITY, P1, DOI 10.1007/978-3-642-11125-9

← 1 2 →