Dynamical behavior of the scanning thermal microscope (SThM) thermal resistive probe studied using Si/SiGe microcoolers

被引：11
作者：
Ezzahri, Y
Lopez, LDP
Chapuis, O
Dilhaire, S
Grauby, S
Claeys, W
Volz, S
机构：
[1] Univ Bordeaux 1, Ctr Phys Mol Opt & Hert, F-33405 Talence, France
[2] Ecole Cent Paris, F-92295 Chatenay Malabry, France
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 01期
关键词：
SThM technique; microcooler; Wollaston wire; SThM thermal probe time response; Tip-sample contact resistance;
D O I：
10.1016/j.spmi.2005.04.005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a simple method for the characterization of the dynamical behavior of the SThM Wollaston wire thermal resistive probe using Si/SiGe microcoolers. Measurements show a time response of about 186 mu s. This value confirms the value found in the literature. Measurements also allow us to determine the total thermal tip-sample contact resistance Z(Th)(C). (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：69 / 75
页数：7
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