Thermally and light-activated current in ZnO/CdS/CuGaSe2 single crystal solar cells

被引：7
作者：
Saad, M. [1 ]
Kassis, A. [1 ]
机构：
[1] Atom Energy Commiss Syria, Damascus, Syria
来源：
RENEWABLE ENERGY | 2008年 / 33卷 / 05期
关键词：
solar cells; CuGaSe2; interface recombination; tunnelling; activation energy;
D O I：
10.1016/j.renene.2007.06.011
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Current voltage characteristics of ZnO/CdS/CuGaSe2 single crystal solar cells which have gone through repetitive annealing treatment were analysed using the two-diode equation. The fitting analysis revealed that current transport in these cells is governed by two competing transport mechanisms relating strongly to interface states and that both mechanisms are thermally and light-activated. The activation energy values for both mechanisms were calculated from the temperature dependence of the parameters describing each of them. Furthermore, it was found that the calculated activation energy values depend on temperature and illumination intensity. A qualitative explanation for this dependence is given. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：974 / 978
页数：5
相关论文
共 10 条
[1]   Diode (characteristics in state-of-the-art ZnO/CdS/Cu(In1-xGax)Se2 solar cells [J].
Contreras, MA ;
Ramanathan, K ;
AbuShama, J ;
Hasoon, F ;
Young, DL ;
Egaas, B ;
Noufi, R .
PROGRESS IN PHOTOVOLTAICS, 2005, 13 (03) :209-216
[2]  
Fahrenbuch A. L., 1983, FUNDAMENTALS SOLAR C, P236
[3]   Electronic properties of CuGaSe2-based heterojunction solar cells.: Part I.: Transport analysis [J].
Nadenau, V ;
Rau, U ;
Jasenek, A ;
Schock, HW .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :584-593
[4]   Tunneling-enhanced recombination in Cu(In,Ga)Se2 heterojunction solar cells [J].
Rau, U .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :111-113
[5]   Current transport in ZnO/ZnS/Cu(In,Ga)(S,Se)2 solar cell [J].
Rusu, M ;
Eisele, W ;
Würz, R ;
Ennaoui, A ;
Lux-Steiner, MC ;
Niesen, TP ;
Karg, F .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) :2037-2040
[6]   Optimisation of the CBD CdS deposition parameters for ZnO/CdS/CuGaSe2/Mo solar cells [J].
Rusu, M ;
Rumberg, A ;
Schuler, S ;
Nishiwaki, S ;
Würz, R ;
Babu, SM ;
Dziedzina, M ;
Kelch, C ;
Siebentritt, S ;
Klenk, R ;
Schedel-Niedrig, T ;
Lux-Steiner, MC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) :1849-1853
[7]   Analysis of illumination-intensity-dependent j-V characteristics of ZnO/CdS/CuGaSe2 single crystal solar cells [J].
Saad, M ;
Kassis, A .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 77 (04) :415-422
[8]  
Saad M, 1996, APPL PHYS A-MATER, V62, P181
[9]  
Saad M., 1994, P 1 WORLD C PVEC HAW, P214
[10]   Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)2 heterojunction solar cells [J].
Turcu, M ;
Pakma, O ;
Rau, U .
APPLIED PHYSICS LETTERS, 2002, 80 (14) :2598-2600
1