The formation of an inhomogeneous distribution of oxygen in CZ-Si crystal - An investigation with quantum reaction-diffusion equation

With a statistical partition function model for oxygen atoms at the interface between the silicon crystal and melt during Czochralski silicon (CZ-Si) crystallisation, we research a dynamic reaction-diffusion process to analyse the nonequilibrium dynamical distribution of oxygen atoms in the silicon medium. The calculated results from the quantum reaction-diffusion equation (QRDE) shows that the striations of oxygen concentration distribution observed in the experiment can be explained by such nonequilibrium dynamical reaction-diffusion processes. These results are suitable for understanding how the striations are related to the physical conditions of a practical crystal growth process. (C) 1998 Elsevier Science B.V. All rights reserved.