Integrated twin-photon sources for the silicon absorption band: a numerical study

被引:3
作者
Ducci, S
Leo, G
Berger, V
De Rossi, A
Assanto, G
机构
[1] Laboratoire Matériaux et Phénomènes Quantiques, Université Paris 7-Denis Diderot, 75251 Paris, 2, Place Jussieu
[2] Thales Research and Technology
[3] Department of Electronic Engineering, Nonlinear Optics and OptoElectronics Laboratory, University Roma Tre, 00146 Rome
关键词
D O I
10.1364/JOSAB.22.002331
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We numerically study a narrowband semiconductor integrated source of counterpropagating twin photons for line-of-sight experiments in quantum key distribution. Considering the air transparency and the availability of silicon avalanche photodiodes to be around 770 nm, we focus on GaN- and ZnSe-based quadratically nonlinear multilayer waveguides. The design of a quasi-phase-matched chi((2)) profile in the growth direction allows us to generate 3 X 10(5) guided photon pairs per second for a pump power around 300 mW. (c) 2005 Optical Society of America.
引用
收藏
页码:2331 / 2337
页数:7
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