Defect mediated extraction in InAs/GaAs quantum dot solar cells

被引：32
|
作者：
Willis, S. M. [2 ]
Dimmock, J. A. R. [3 ]
Tutu, F. [4 ]
Liu, H. Y. [4 ]
Peinado, M. G. [5 ]
Assender, H. E. [2 ]
Watt, A. A. R. [2 ]
Sellers, I. R. [1 ,2 ]
机构：
[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[3] Sharp Labs Europe Ltd, Oxford OX4 4GB, England
[4] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[5] CASEM, Decanto Fac Ciencias Naut, Puerto Real 11510, Spain
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 102卷
关键词：
Quantum dot solar cells; Carrier escape; Defect; GROWTH-TEMPERATURE; DEVICES;
D O I：
10.1016/j.solmat.2012.03.010
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to efficient carrier extraction. We present experimental evidence and a theoretical model to show that carrier extraction from InAs quantum dots is significantly enhanced by the presence of defects, which act to lower the potential barrier for carrier escape. Therefore in the long-wavelength region where the quantum dots are strongly absorbing we suggest that contrary to bulk systems, radiative, rather than non-radiative, processes appear to limit the performance of quantum dot solar cells. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：142 / 147
页数：6
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