High-Vacuum Evaporation of n-CuIn3Se5 Photoabsorber Films for Hybrid PV Structures

被引：6

作者：

Adhikari, N. ^{[1
]}

Bereznev, S. ^{[1
]}

Laes, K. ^{[1
]}

Kois, J. ^{[1
]}

Volobujeva, O. ^{[1
]}

Raadik, T. ^{[1
]}

Traksmaa, R. ^{[2
]}

Tverjanovich, A. ^{[3
]}

Oepik, A. ^{[1
]}

Mellikov, E. ^{[1
]}

机构：

[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia

[2] Tallinn Univ Technol, Mat Res Ctr, EE-19086 Tallinn, Estonia

[3] St Petersburg State Univ, Dept Chem, St Petersburg 198504, Russia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 12期

关键词：

CuIn3Se5; photoabsorber; high-vacuum evaporation; annealing; CONSTANT PHASE ELEMENT; CUIN3SE5; FILMS; CHALCOPYRITE SEMICONDUCTORS; LASER DEPOSITION; THIN-FILMS; ABSORPTION; BEHAVIOR; CUINSE2;

D O I：

10.1007/s11664-011-1753-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of Cu-In-Se (CISe) photoabsorber with an overall composition of CuIn3Se5 were deposited onto glass/indium tin oxide (ITO) substrates from a polycrystalline bulk CuIn3Se5 source using the high-vacuum evaporation technique. Thermal conditions for the substrates during the evaporation process and the subsequent annealing in vacuum were selected to prepare polycrystalline n-CuIn3Se5 photoabsorber layers for use in hybrid photovoltaic structures based on an inorganic photoabsorber and conductive polymer functional layers. The CISe layers were deposited at a substrate temperature of 200 degrees C and were annealed at temperatures from 300 degrees C to 500 degrees C in vacuum. Part of the as-deposited CISe was annealed twice, in argon and in vacuum at 500 degrees C. These layers exhibited high photosensitivity and photoconductivity when illuminated with white light at an intensity of 100 mW/cm(2). The results showed that the chalcopyrite structure of the prepared CISe photoabsorber films adhered well to the glass/ITO substrate. The average value of charge carrier concentration and the profile of charge carrier concentration in the annealed CISe photoabsorber layer were calculated using impedance spectroscopy.

引用

页码：2374 / 2381

页数：8

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