Spectroscopic studies on electroless deposition of copper on hydrogen-terminated Si(III) surface in NH4F solution containing Cu(II) ions

被引：0

作者：

Lee, IC ^{[1
]}

Bae, SE ^{[1
]}

Song, MB ^{[1
]}

Lee, JS ^{[1
]}

Paek, SH ^{[1
]}

Lee, CWJ ^{[1
]}

机构：

[1] Korea Univ, Coll Sci & Technol, Jochiwon 339700, Choongnam, South Korea

来源：

BULLETIN OF THE KOREAN CHEMICAL SOCIETY | 2004年 / 25卷 / 02期

关键词：

silicon; copper; ammonium fluoride; ATR; STM;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 cm(-1) appeared after the H-Si(111) surface was immersed in 40% NH4F solution 21 containing 10 mM Cu2+. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and Cu2+, ions in solutions, which are changed into Si(OH)(x)(F)(y) containing SiF62- ions and neutral copper islands.

引用

页码：167 / 171

页数：5

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