Effect of temperature on processes of radiation-induced generation of primary defects in MgF2 crystals

被引：4
|
作者：
Lisitsyna, LA [1 ]
Korepanov, VI
Grechkina, TV
机构：
[1] Tomsk State Architecture & Construct Univ, Tomsk 630003, Russia
[2] Tomsk Polytech Univ, Tomsk 634004, Russia
来源：
OPTICS AND SPECTROSCOPY | 2003年 / 95卷 / 05期
关键词：
D O I：
10.1134/1.1628723
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2, crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T greater than or equal to 150 K. The temperature quenching of the 3.2-eV exciton emission at T greater than or equal to 60 K is detected. The ionic structure of the short-lived excitonic state is discussed. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：746 / 750
页数：5
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