Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures

被引：0

作者：

Torchynska, T. V. ^{[1
]}

Lozada, E. Velazquez ^{[1
]}

Dybiec, M. ^{[2
]}

Ostapenko, S. ^{[2
]}

Eliseev, P. G. ^{[3
]}

Stintz, A. ^{[3
]}

Malloy, K. J. ^{[3
]}

Sierra, R. Pena ^{[4
]}

机构：

[1] Natl Polytech Inst, ESFM, Ed 9, Mexico City 07738, DF, Mexico

[2] Univ S Florida, Tampa, FL 33620 USA

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA

[4] CINVESTAV, IPN, Mexico City 07738, DF, Mexico

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NO 5 | 2007年 / 6卷 / 05期

关键词：

InAs quantum dots; photoluminescence; multi-excited states;

D O I：

10.1142/S0219581X07004912

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300K on InAs QDs inserted in In0.15Ga0.85As/GaAs QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).

引用

页码：383 / +

页数：2

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