BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

被引：4

作者：

Alcala, R. ^{[1
]}

Materano, M. ^{[1
]}

Lomenzo, P. D. ^{[1
]}

Grenouillet, L. ^{[2
]}

Francois, T. ^{[2
]}

Coignus, J. ^{[2
]}

Vaxelaire, N. ^{[2
]}

Carabasse, C. ^{[2
]}

Chevalliez, S. ^{[2
]}

Andrieu, F. ^{[2
]}

Mikolajick, T. ^{[1
]}

Schroeder, U. ^{[1
]}

机构：

[1] TU Dresden gGmbH, NaMLab, Noethnitzer Str 64a, D-01187 Dresden, Germany

[2] Univ Grenoble Alpes, CEA, LETI, 17 Ave Martyrs, F-38000 Grenoble, France

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

基金：

欧盟地平线“2020”;

关键词：

HfO2; Ferroelectric and BEOL;

D O I：

10.1109/EDTM53872.2022.9798048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. These parameters were electric field, capacitor area, and temperature and they were evaluated on single and parallel structured capacitors in order to understand their impact on wake-up, fatigue, imprint, and retention.

引用

页码：67 / 69

页数：3

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