Strain-induced Fermi contour anisotropy of GaAs 2D holes

被引：11

作者：

Shabani, J. ^{[1
]}

Shayegan, M. ^{[1
]}

Winkler, R. ^{[2
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.100.096803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements of magnetoresistance commensurability peaks, induced by a square array of antidots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.

引用

页数：4

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