Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

被引：54

作者：

Brown, J. J. ^{[1
,5
]}

Baca, A. I. ^{[1
,5
]}

Bertness, K. A. ^{[2
,5
]}

Dikin, D. A. ^{[3
,5
]}

Ruoff, R. S. ^{[4
,5
]}

Bright, V. M. ^{[1
,5
]}

机构：

[1] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA

[2] Natl Inst Stand & Technol, Optoelect Div 815, Boulder, CO 80305 USA

[3] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA

[4] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[5] Univ Colorado, DARPA Ctr Integrated Micro Nanoelectromech Transd, Boulder, CO 80309 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2011年 / 166卷 / 02期

基金：

美国国家科学基金会;

关键词：

Tensile Loading; Gallium Nitride; Nanowire; Single Crystal; Mechanical Testing; MEMS; GAN; CONTACTS;

D O I：

10.1016/j.sna.2010.04.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires(1) that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042 +/- 0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0 +/- 1.7 GPa to 7.5 +/- 3.4 GPa. Failure modes included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS test actuator. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：177 / 186

页数：10

共 35 条

[1]

Baker M. S., 2004, 52553 LDRD SAND NAT, DOI 10.2172/920746

[2] Spontaneously grown GaN and AlGaN nanowires [J].

Bertness, KA ;

Roshko, A ;

Sanford, NA ;

Barker, JM ;

Davydov, A .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :522-527

[3] MESFETs Made From Individual GaN Nanowires [J].

Blanchard, Paul T. ;

Bertness, Kris A. ;

Harvey, Todd E. ;

Mansfield, Lorelle M. ;

Sanders, Aric W. ;

Sanford, Norman A. .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (06) :760-765

[4] TENSILE MEASUREMENT OF A SINGLE CRYSTAL GALLIUM NITRIDE NANOWIRE [J].

Brown, J. J. ;

Baca, A. I. ;

Bright, V. M. .

IEEE 22ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2009), 2009, :642-645

[5]

BROWN JJ, 2008, P SOL STAT SENS ACT, P182

[6] Microsystem for nanofiber electromechanical measurements [J].

Brown, Joseph J. ;

Suk, Ji Won ;

Singh, Gurpreet ;

Baca, Alicia I. ;

Dikin, Dmitriy A. ;

Ruoff, Rodney S. ;

Bright, Victor M. .

SENSORS AND ACTUATORS A-PHYSICAL, 2009, 155 (01) :1-7

[7]

Carter J., 2005, POLYMUMPS DESIGN HDB

[8] Size dependence of Young's modulus in ZnO nanowires [J].

Chen, CQ ;

Shi, Y ;

Zhang, YS ;

Zhu, J ;

Yan, YJ .

PHYSICAL REVIEW LETTERS, 2006, 96 (07)

[9] Mechanical elasticity of vapour-liquid-solid grown GaN nanowires [J].

Chen, Yunxia ;

Stevenson, Ian ;

Pouy, Rebecca ;

Wang, Lidong ;

McIlroy, David N. ;

Pounds, Tyler ;

Norton, M. Grant ;

Aston, D. Eric .

NANOTECHNOLOGY, 2007, 18 (13)

[10] Structural and vibrational properties of GaN [J].

Deguchi, T ;

Ichiryu, D ;

Toshikawa, K ;

Sekiguchi, K ;

Sota, T ;

Matsuo, R ;

Azuhata, T ;

Yamaguchi, M ;

Yagi, T ;

Chichibu, S ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) :1860-1866

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