Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

被引：10

作者：

Griffoni, Alessio ^{[1
]}

Gerardin, Simone ^{[1
,2
]}

Cester, Andrea ^{[1
,2
]}

Paccagnella, Alessandro ^{[1
,2
]}

Simoen, Eddy ^{[3
]}

Claeys, Cor ^{[3
]}

机构：

[1] Univ Padua, Dipartimento Ingn Informaz, I-35131 Padua, Italy

[2] Ist Nazl Fis Nucl, I-35131 Padua, Italy

[3] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

CMOS devices and integrated circuits reliability; heavy ions; SOI; strain;

D O I：

10.1109/TNS.2007.909510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFETs with different strain engineering solutions. Some of the phenomena already present in bulk devices, such as drain current collapse, are still observed alongside some new long-term effects concerning the degradation kinetics under electrical stress. On the other side, early breakdown seems to vanish. SOI degradation after heavy-ion strikes and during following electrical stress is shown to depend on the strain level and strain-inducing technique. We interpreted these results in terms of radiation-induced defects in the gate and isolation oxide.

引用

页码：2257 / 2263

页数：7

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