Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method

被引:14
作者
Nakagawa, A.
Masuoka, F.
Chiba, S.
Endo, H.
Megro, K.
Kashiwaba, Y.
Ojima, T.
Aota, K.
Niikura, I.
Kashiwaba, Y.
机构
[1] Iwate Univ, Morioka, Iwate 0208551, Japan
[2] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan
[3] Sendai Natl Coll Technol, Sendai, Miyagi 9893128, Japan
关键词
ZnO; plasma-assisted reactive evaporation; hornoepitaxial growth; nitrogen doping; photoluminescence;
D O I
10.1016/j.apsusc.2007.07.107
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoluminescence (PL) spectra of nitrogen-doped ZnO films (ZnO:N films) grown epitaxially on n-type ZnO single crystal substrates by using the plasma-assisted reactive evaporation method were measured at 5 K. In PL spectra, free exciton emission at about 3.375 eV was very strong and emissions at 3.334 and 3.31 eV were observed. These two emissions are discussed in this paper. The nitrogen concentration in ZnO:N films measured by secondary ion mass spectroscopy was 10(19-20) cm(-3). Current-voltage characteristics of the junction consisting of an n-type ZnO single crystal substrate and ZnO:N film showed good rectification. Also, ultraviolet radiation and visible light were emitted from this junction under a forward bias at room temperature. It is therefore thought that ZnO:N films have good crystallinity and that doped nitrogen atoms play a role as acceptors in ZnO:N films to form a good pn junction. From these phenomena and the excitation intensity dependency of PL spectra, emissions at 3.334 and 3.31 eV were assigned to neutral acceptor-bound exciton (A(0)X) emission and a donor-acceptor pair (DAP) emission due to doped nitrogen, respectively. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:164 / 166
页数:3
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